Enhanced model for scanning tunneling microscope tip geometry measured with field ion microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 636-641

  Rao, P V M ^a,b   Jenssn, C P ^a,c   Silver, R M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); GEOMETRY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; PROBABILITY DISTRIBUTIONS; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

CHARGE DISTRIBUTION; FIELD ION MICROSCOPY (FIM); GEOMETRICAL TIP; LAME'S CURVE;

MICROSCOPES;

EID: 2342535112     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1648064     Document Type: Article

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