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Volumn 17, Issue , 2004, Pages 827-831

A new surface accumulation layer transistor(SALTran) concept for current gain enhancement in bipolar transistors

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN; CUT-OFF FREQUENCY; NOISE CURRENTS; WORK FUNCTIONS;

EID: 2342471927     PISSN: 10639667     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (7)
  • 1
    • 0027685282 scopus 로고
    • High-low polysilicon emitter SiGe base bipolar transistors
    • October
    • E.F.Crabbe, et al., "High-low polysilicon emitter SiGe base bipolar transistors," IEEE Electron Device Lett., Vol.14, pp.478-480, October 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 478-480
    • Crabbe, E.F.1
  • 2
    • 0029209362 scopus 로고
    • A high-low emitter bipolar power transistor
    • S.S. Ang, "A high-low emitter bipolar power transistor," Microelectronics Journal, vol.26, pp. 1-7, 1995.
    • (1995) Microelectronics Journal , vol.26 , pp. 1-7
    • Ang, S.S.1
  • 3
    • 0027675868 scopus 로고
    • A novel PHL-emitter bipolar transistor - Fabrication and characterization
    • October
    • K.Z. Chang, and C.Y. Wu, "A novel PHL-emitter bipolar transistor - fabrication and characterization," Solid-state Electronics, Vol.36, pp.1393-1399, October 1993.
    • (1993) Solid-state Electronics , vol.36 , pp. 1393-1399
    • Chang, K.Z.1    Wu, C.Y.2
  • 4
    • 0027803922 scopus 로고
    • A self-aligned lateral bipolar transistor realized on SIMOX material
    • Dec
    • B. Edholm, J. Olsson and A. Soderbarg, "A self-aligned lateral bipolar transistor realized on SIMOX material," IEEE Trans. on Electron Devices, vol.40, pp.2359-2360, Dec 1993.
    • (1993) IEEE Trans. on Electron Devices , vol.40 , pp. 2359-2360
    • Edholm, B.1    Olsson, J.2    Soderbarg, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.