Study of Spin-Polarized Transport Properties for Spin-FET Design Optimization

IEEE Transactions on Nanotechnology

Volumn 3, Issue 1 SPEC. ISS., 2004, Pages 173-179

  Saikin, Semion ^a,b   Shen, Min ^a   Cheng, Ming C ^a  

^a Clarkson University   (United States)

^b KAZAN FEDERAL UNIVERSITY   (Russian Federation)

Author keywords

Anisotropy; Monte Carlo; Spin relaxation; Spin FET; Spintronics

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; MONTE CARLO METHODS; OPTIMIZATION; POLARIZATION; PRODUCT DESIGN; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

SPIN ELECTRONICS; SPIN POLARIZATION; SPIN RELAXATION; SPIN-FET;

FIELD EFFECT TRANSISTORS;

EID: 2342470684     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2004.824021     Document Type: Conference Paper

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