Optical characterization of GaN doping superlattices: As grown, hydrogen implanted, and annealed

Physica Status Solidi C: Conferences

Volumn 1, Issue 2, 2004, Pages 223-228

  Kunert, H W ^a   Brink, D J ^a   Hayes, M ^a   Malherbe, J ^a   Prinsloo, L ^a   Barnas, J ^b   Machatine, A G I ^a   Diale, M W ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b ADAM MICKIEWICZ UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; EPITAXIAL GROWTH; HYDROGEN; ION IMPLANTATION; NUCLEATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

DONOR ACCEPTOR PAIR (DAP); DOPING SUPERLATTICES (DSL); EFFECTIVE MASS (EFM) APPROACHES; YELLOW BANDS (YB);

GALLIUM NITRIDE;

EID: 2342446544     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303925     Document Type: Conference Paper

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