Electron spin-relaxation times in p-type δ-doped GaAs/AlGaAs double heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 2 A, 2000, Pages 397-401

  Endo, Toshihiro ^a   Sueoka, Kazuhisa ^a,b   Mukasa, Koichi ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

BAP mechanism; Optically pumped GaAs; Spin relaxation; Spin polarized STM; Time resolved photoluminescence; doping

Indexed keywords

EID: 2342442573     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.397     Document Type: Article

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