Hole-doping effect on the thermoelectric properties and electronic structure of CoSi

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 12, 2004, Pages

  Lue, C S ^a   Kuo, Y K ^b   Huang, C L ^a   Lai, W J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; SILICON DERIVATIVE;

ARTICLE; CALCULATION; CHEMICAL COMPOSITION; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMODYNAMICS;

EID: 2342418539     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.125111     Document Type: Article

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