Optimized conditions for fabrication of La-dopant in PZT ceramics

Sensors and Actuators, A: Physical

Volumn 122, Issue 2, 2005, Pages 250-256

  Pdungsap, Laddawan ^a   Udomkan, Nitinai ^b   Boonyuen, Supakorn ^a   Winotai, Pongtip ^a  

^a MAHIDOL UNIVERSITY   (Thailand)

^b KING MONGKUT'S UNIVERSITY OF TECHNOLOGY THONBURI   (Thailand)

Author keywords

Morphotropic phase boundary; Piezoelectric; PLZT

Indexed keywords

CALCINATION; COUPLED CIRCUITS; GRAIN SIZE AND SHAPE; LANTHANUM; LEAD COMPOUNDS; MICROSTRUCTURE; PERMITTIVITY; PHASE TRANSITIONS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTOR DOPING; SINTERING;

MORPHOTROPIC PHASE BOUNDARY (MPB); PHASE COEXISTANCE PHENOMENA; PIEZOELECTRIC; PLZT;

CERAMIC MATERIALS;

EID: 23344453367     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.06.002     Document Type: Article

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