Bit selection scheme and dipolar interactions in high density precessional MRAM

IEE Proceedings: Science, Measurement and Technology

Volumn 152, Issue 4, 2005, Pages 196-200

  Devolder, T ^a   Maufront, C ^a,b   Kim, J V ^a   Schumacher, H W ^a   Chappert, C ^a   Fournel, R ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; BANDWIDTH; CRYSTALLINE MATERIALS; CURRENT DENSITY; ENCODING (SYMBOLS); ENERGY DISSIPATION; INTERPOLATION; MAGNETIC COUPLINGS; MAGNETIC FIELDS; MAGNETIZATION; SWITCHING;

BIT SELECTION SCHEMES; DIPOLAR INTERACTIONS; MAGNETIC RANDOM ACCESS MEMORIES (MRAM); PRECESSIONAL SWITCHING PROCESS;

RANDOM ACCESS STORAGE;

EID: 23244461264     PISSN: 13502344     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-smt:20049037     Document Type: Conference Paper

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