Effect of nonstoichiometry on Raman scattering of VO2 films

Chinese Physics

Volumn 13, Issue 1, 2004, Pages 82-84

  Yuan, Hong Tko ^a,b   Feng, Ke Cheng ^a   Wang, Xue Jin ^b   Li, Chao ^a   He, Chen Juan ^b   Nie, Yu Xin ^b  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Nonstoichiometry; Raman spectra; RF magnetron sputtering; Vanadium dioxide thin films

Indexed keywords

MAGNETRON SPUTTERING; RAMAN SCATTERING; STOICHIOMETRY; THIN FILMS;

NONSTOICHIOMETRY; RAMAN PEAKS; RF MAGNETRON SPUTTERING; VANADIUM OXIDE THIN FILMS;

VANADIUM COMPOUNDS;

EID: 23244440543     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/13/1/015     Document Type: Article

References (9)

1. Zhu P R, Yamaoto S, Miyashita A, Wu Z P, Narumi K and Naramoto H 1999 Philos. Mag. Lett. 79 603
2. Granqvist C G 1991 Materials Science for Solar Energy Conversation Systems (Oxford: Pergamon)
3. Granqvist C G 1990 Thin Solid Films 193/194 730
4. Parker J C 1990 Phys. Rev. B 42 3164
5. Wang X J, Xu J J, Fei Y J, Li D H, Nie Y X, Feng K A and Wu N J 2002 Japan. J. Appl Phys. 41 312
6. Aronov A G, Mirlin D N, Reshna I I and Chudnovskii F A 1977 Tala Fiz Tverd (Leningard) 19 193
7. [1977 Sov. Phys.-Solid State 19 110]
8. Griffiths C H and Eastwood H K 1974 J. Appl. Phys. 45 2201
9. Kusano E et al 1989 J. Vac. Sci. Technol. A 7 1314