Inverse tunnel magnetoresistance associated with Coulomb staircases in micro-fabricated granular systems

Journal of Magnetism and Magnetic Materials

Volumn 272-276, Issue SUPPL. 1, 2004, Pages

  Yamane, K ^a   Yakushiji, K ^a,b   Ernult, F ^a   Matsuura, M ^a   Mitani, S ^a,b   Takanashi, K ^a,b   Fujimori, H ^b,c  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

Coulomb blockade; Coulomb staircase; Electron beam lithography; Granular film; Inverse tunnel magnetoresistance; MRAM; Single electron tunneling

Indexed keywords

COULOMB BLOCKADE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; ELECTRONIC EQUIPMENT; ION BEAMS; MAGNETORESISTANCE; MATHEMATICAL MODELS; RANDOM ACCESS STORAGE; THIN FILMS;

COULOMB STAIRCASE; INVERSE TUNNEL MAGNETORESISTANCE; ION BEAM SPUTTERING; SINGLE-ELECTRON TUNNELING;

GRANULAR MATERIALS;

EID: 23144447799     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2003.12.173     Document Type: Conference Paper

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