A novel process for highly manufacturable MRAM

Journal of Magnetism and Magnetic Materials

Volumn 272-276, Issue III, 2004, Pages 1936-1938

  Oh, J H ^a   Park, J H ^a   Kim, H J ^a   Jeong, W C ^a   Koh, G H ^a   Jeong, G T ^a   Hwang, I J ^b   Kim, T W ^b   Lee, J E ^a   Park, S O ^a   Jeong, U I ^a   Jeong, H S ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

High density; MRAM; MTJ patterning

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; MAGNETIC MATERIALS; MAGNETORESISTANCE; REACTIVE ION ETCHING; SWITCHING; TUNNEL JUNCTIONS;

HIGH DENSITY; MAGNETIC TUNNEL JUNCTIONS (MTJ); MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM); MTJ PATTERNING;

RANDOM ACCESS STORAGE;

EID: 23044488903     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2003.12.1190     Document Type: Conference Paper

References (3)

1. N. Sakimura, et al., ISSCC Digest of Technical Papers, 2003, p. 224.
2. G.T. Jeong, et al.,ISSCC Digest of Technical Papers, 2003, p. 226.
3. E. Chen, et al., J. Appl. Phys. 93 (2003) 8539.