Electrical resistivity and photoemission spectra of layered oxysulfide (La1-xCaxO)Cu1-xNixS

Physica B: Condensed Matter

Volumn 329-333, Issue II, 2003, Pages 898-899

  Takase, K ^a   Shimizu, T ^a   Makihara, K ^a   Sato, H ^b   Negishi, H ^b   Takahashi, Y ^a   Takano, Y ^a   Sekizawa, K ^a   Kuroiwa, Y ^c   Aoyagi, S ^c   Utsumi, A ^c   Wada, A ^b   Ino, A ^b   Namatame, H ^b   Taniguchi, M ^b  

^a NIHON UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c OKAYAMA UNIVERSITY   (Japan)

Author keywords

Metal semiconductor transition; Oxysulfide; Resistivity minimum; Wide gap semiconductor

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ENERGY GAP; MAGNETORESISTANCE; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SPECIFIC HEAT;

METAL-SEMICONDUCTOR TRANSITIONS; OXYSULFIDE; RESISTIVITY MINIMUM; WIDE GAP SEMICONDUCTOR;

LANTHANUM COMPOUNDS;

EID: 23044461770     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)02579-6     Document Type: Conference Paper

References (6)

1. K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, H. Hosono, Appl. Phys. Lett. 77 (2000) 2701.
2. Y. Takano, K. Yahagi, K. Sekizawa, Physica B 206, 207 (1995) 764.
3. K. Sekizawa, Y. Takano, K. Mori, K. Yahagi, Czech. J. Phys. 46 (Suppl. S4) (1996) 1943.
4. K. Yoshida, Y. Maeno, S. Nishizaki, S. Ikeda, T. Fujita, J. Low Temp. Phys. 105 (1996) 1593.
5. I. Terasaki, Y. Sasago, K. Uchinokura, Phys. Rev. B 56 (1997) R12685.
6. M. Sawicki, T. Dietl, J. Kossut, J. Igalson, T. Wojtowicz, W. Plesiewicz, Phys. Rev. Lett. 56 (1986) 508.