Quantitative study of chemical mechanical planarization process affected by bare silicon wafer front surface topography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2210-2215

  Liu, Jerry ^a  

^a ADE Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844455673     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (3)

1. C. S. Xu, E. Zhao, R. Jairath, and W. Krusell, Electrochem. Solid-State Lett. 1, 181 (1998).
2. D. Ouma, C. Oji, D. Boning, J. Chung, D. Hetherington, and P. Merkel, in Proceedings of the Chemical-Mechanical Planarization for ULSI Mul-tilevel Interconnection Conference, 1998, p. 20.
3. R. Jairath, A. Pant, T. Mallon, B. Withers, and W. Krusell, Solid State Technol. 39, 107 (1996).