Analysis of submicron Cu-Ta-SiO2 structures by highly charged ion secondary ion mass spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 5, 1999, Pages 2331-2335

  Schenkel, T ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22844453796     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. Materials and Bulk Process Roadmap (Semiconductor Industry Association, San Jose, CA, 1997).
2. M. A. Douglas and P. J. Chen, Surf. Interface Anal. 26, 984 (1998);
3. P. K. Chu, B. W. Schueler, F. Reich, and P. M. Lindley, J. Vac. Sci. Technol. B 15, 1908 (1997);
4. A. Schnieders, R. Möllers, M. Terhorst, H.-G. Cramer, E. Niehuis, and A. Benninghoven, J. Vac. Sci. Technol. B, ibid. 14, 2712 (1996).