Compact device modeling using Verilog-AMS and ADMS

Electron Technology

Volumn 35, Issue , 2003, Pages

  Lemaitre, L ^a   Grabinski W ^a   Mcandrew, C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CODES (SYMBOLS); COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; NETWORKS (CIRCUITS); SEMICONDUCTOR MATERIALS; SIMULATORS;

COMPACT DEVICE MODELING; MODEL INTERFACE; SPICE SIMULATORS; VERILOG;

HIGH LEVEL LANGUAGES;

EID: 22844437433     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. L. LEMAITRE, C. MCANDREW, S. HAMM, ADMS - Automatic Device Model Synthesize, CICC 2002, Florida, USA.
2. Verilog-AMS Language Reference Manual, Open Verilog Int., 1999.
3. MICA Device Programming Interface, Documentation and Programmer's Guide, Motorola Internal Document, 1998.
4. SPECTRE CMI Reference Manual, Cadence Design System, 1995.
5. Analog/RF User-Defined Models, Agilent Technologies, April 2001
6. C. ENZ, F. KRUMMENACHER, E. VITTOZ, An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applicatioa J. Analog Intrgrst. Circ. a. Signal Process., 1995, 8, 83-114, Kluwer Acad. Pub.,
7. M. BUCHER, C. LALLEMENT, C. ENZ, F. THÉODOLOZ, F. KRUMMENACHER, The EPFL-EKV MOSFET Model Equations for Simulation, Version 2.6, Technical Report, Electronics Laboratory, Swiss Federal Institute of Technology Lausanne, (EPFL), June 1997. Web Resources: http://legwww.epfl.ch/ekv/
8. M. BUCHER, Analytical MOS Transistor Modeling for Analog Circuit Simulation, Ph.D. Thesis No. 2114, 1999, EPFL, Lausanne.
9. C. LALLEMENT ET AL., High Level Description of Thermodynamical Effects in the EKV 2.6 Most Model, Proc. 9th Int. Conf. on Mixed-Signal Design (MIXDES), Wrocław, Poland, June 2002.
10. T. L. CHEN, G. GILDENBLAT, Analytical Approximation for the MOSFET Surface Potential, Solid-St. Electron., 2001, 45, 3335.
11. M. BUCHER ET AL., EKV 3.0: An Analog Design-Oriented MOS Transistor Model, Proc. 9th Int. Conf. on Mixed-Signal Design (MIXDES), Wrocław, Poland, June 2002.