8 νm strain-compensated quantum cascade laser operating at room temperature

Semiconductor Science and Technology

Volumn 20, Issue 8, 2005, Pages 844-846

  Guo, Yu ^a   Liu, F Q ^a   Liu, J Q ^a   Li, C M ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; HEAT LOSSES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; STRAIN; THERMAL EFFECTS;

HIGH OPERATING TEMPERATURE; PEAK POWER; QUANTUM CASCADE LASERS; ROOM TEMPERATURE;

QUANTUM THEORY;

EID: 22844432570     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/8/037     Document Type: Article

References (12)

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