In situ surface composition and structure of InGaN and GaN thin films by time-of-flight mass spectroscopy of recoiled ions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1209-1213

  Kim, E ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644448822     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590724     Document Type: Article

References (13)

1. L. K. Li, J. Alperin, W. I. Wang, D. C. Look, and D. C. Reynolds, J. Vac. Sci. Technol. B 16, 1275 (1998).
2. N. Grandjean and J. Massies, Appl. Phys. Lett. 72, 1078 (1998).
3. O. Auciello, A. R. Krauss, and J. A. Schultz, MRS Bull. XX (1995).
4. S. M. Gate and D. D. Koleske, Thin Solid Films 225, 160 (1993).
5. J. Ahn, M. M. Sung, J. W. Rabalais, D. D. Koleske, and A. E. Wickenden, J. Chem. Phys. 107, 9577 (1997).
6. E. Kim, I. Berishev, A. Bensaoula, S. Lee, S. S. Perry, K. Waters, and J. A. Schultz, Appl. Phys. Lett. 71, 3072 (1997).
7. E. Kim, I. Berishev, A. Bensaoula, I. Rusakova, K. Waters, and J. A. Schultz, J. Appl. Phys. 85, 1178 (1999).
8. K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka, and S. Minagawa, J. Appl. Phys. 79, 3487 (1996).
9. S. S. Liu and D. A. Stevenson, J. Electrochem. Soc. 125, 1161 (1978).
10. I. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
11. V. S. Smentkowski, J. C. Holecek, J. A. Schultz, A. R. Krauss, and D. M. Gruen, Proceedings of the 11th International Conference on Secondary Ion Mass Spectroscopy and Related Techniques, Orando, FL, 7-12 September, 1997
12. [SIMS XI, 1083 (1998)].
13. M. Seelmann-Eggebert, J. L. Weyher, H. Obloh, H. Zimmermann, A. Rar, and S. Porowski, Appl. Phys. Lett. 71, 2635 (1997).