Thermal conductivity of a GaAs single crystal grown in microgravity

Low Temperature Physics

Volumn 28, Issue 6, 2002, Pages 462-464

  Ivanov, A I ^a   Luk'Yanov, A N ^a   Merisov, B A ^b   Sologubenko, A V ^b   Khadjai, G Ya ^b  

^a S P KOROLEV ROCKET AND SPACE CORPORATION ENERGIA   (Russian Federation)

^b V N KARAZIN KHARKIV NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DEFECTS; EARTH (PLANET); GALLIUM ARSENIDE; HEAT TRANSFER; III-V SEMICONDUCTORS; MICROGRAVITY; MICROGRAVITY PROCESSING; PHONONS; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; SPACE STATIONS; TEMPERATURE DISTRIBUTION;

ARSENIC ATOM; COMPARATIVE STUDIES; DEBYE MODELS; PHONON SPECTRUM; PLANAR DEFECT; RESONANT SCATTERING; TEMPERATURE DEPENDENCE; TEMPERATURE INTERVALS;

THERMAL CONDUCTIVITY;

EID: 22644441464     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491187     Document Type: Article

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