Quantum interference effects in delta layers of boron in silicon

Low Temperature Physics

Volumn 26, Issue 8, 2000, Pages 598-602

  Krasovitsky, B ^a   Komnik, Yu F ^a   Myronov, M ^b   Whall, T E ^b  

^a B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; QUANTUM INTERFERENCE DEVICES; SILICON;

MOBILE CHARGE CARRIERS; PHASE RELAXATION; QUANTUM CORRECTION; QUANTUM INTERFERENCE EFFECTS; SPIN ORBIT INTERACTIONS; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL ELECTRON SYSTEM; WEAK LOCALIZATION EFFECTS;

TEMPERATURE DISTRIBUTION;

EID: 22644439531     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1289131     Document Type: Article

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