Giant magnetoresistance of La0.5Pb0.2Ca0.2Y0.1MnO 3-δ films obtained by magnetron sputtering

Low Temperature Physics

Volumn 23, Issue 8, 1997, Pages 631-634

  Khartsev, S I ^a   Krivoruchko, V N ^a   Pashchenko, V P ^a  

^a DONETSK PHYSICOTECHNICAL INSTITUTE   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; GIANT MAGNETORESISTANCE; LANTHANUM COMPOUNDS; LEAD COMPOUNDS; MAGNETRON SPUTTERING; MANGANESE COMPOUNDS;

EMPIRICAL RELATIONS; FIELD DEPENDENCE; MAGNETO TRANSPORT PROPERTIES; MAGNETORESISTIVE PROPERTY; PHYSICAL FACTORS; PREPARATION TECHNIQUE;

YTTRIUM COMPOUNDS;

EID: 22544479279     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.593437     Document Type: Article

References (35)

1. J. H. van Santen and G. H. Jonker, Physica 16, 599 (1950).
2. E. O. Wollan and W. C. Koehler, Phys. Rev. 100, 545 (1955).
3. C. W. Searle and S. T. Wang. Can. J. Phys. 48, 2023 (1970).
4. K. P. Belov, E. P. Svirina, O. E. Portugal et al., Fiz. Tverd. Tela (Leningrad) 20, 3492 (1978)
5. [Sov. Phys. Solid State 20, 2021 (1978)].
6. R. M. Kusters, J. Singleton, D. A. Keen et al., Physica B155, 362 (1989).
7. K. Chahara, T. Ohno, M. Kasai, and Y. Kozono, Appl. Phys. Lett 63, 1990 (1993).
8. R. von Helmolt, J. Wecker, B. Holzapfer et al., Phys. Rev. Lett. 71, 2331 (1993).
9. S. Jin, M. McCormack, T. H. Tiefel, and R. Ramesh, J. Appl. Phys. 76, 6929 (1994).
10. H. L. Ju, C. Kwon, Qi Li et al., Appl. Phys. 65, 2108 (1994).
11. È. L. Nagaev, Usp. Fiz. Nauk 166, 833 (1996) [sic.].
12. R. Mahesh, R. Mahendran, A. K. Raychaudhuri, and C. N. R. Rao, J. Solid State Chem. 120, 204 (1995).
13. J. Fontcuberta, B. Martinez, A. Seffar et al., Phys. Rev. Lett. 76, 1122 (1996).
14. H. Y. Hwang, S.-W. Cheng, P. G. Radaelli et al., Phys. Rev. Lett. 75, 914 (1995).
15. I. O. Troyanchuk, Zh. Éksp. Teor. Fiz. 102, 251 (1992)
16. [Sov. Phys. JETP 75, 132 (1992)].
17. A. M. Balbashev, V. A. Kozlov, A. V. Mozhaev, and Ya. M. Mukovskii, in Abstracts of Papers to XV All-Russian Seminar-cum-School on New Magnetic Materials in Microelectronics, Moscow (1996).
18. Y. Tomioka, A. Asamitsu, Y. Moritomo et al., Phys. Rev. Lett. 74, 5108 (1995).
19. Y. Tokura, Y. Tomioka, H. Kuwahara et al., J. Appl. Phys. 79, 5288 (1996).
20. C. Zener, Phys. Rev. 81, 440 (1951).
21. P. W. Anderson and H. Hasegawa, Phys. Rev. 100, 675 (1955).
22. T. M. Perekalina, T. A. Sivokon', S. A. Cherkezyan, and I. E. Lipinski, Fiz. Tverd. Tela (Leningrad) 31, 87 (1989) [sic.].
23. A. J. Millis, P. S. Littlewood, and B. I. Shraiman, Phys. Rev. Lett. 74, 5144 (1994).
24. M. K. Gubkin, A. V. Zalesskii, V. G. Krivenko, et al., Pis'ma Zh. Éksp. Teor. Fiz. 60, 56 (1994)
25. [JETP Lett. 60, 57 (1994)].
26. V. A. Kashin and È. L. Nagaev, Zh. Éksp. Teor. Fiz. 66, 2105 (1974)
27. [JETP 39, 1036 (1974)].
28. E. L. Nagaev, Magnetic Semiconductors, [in Russian], Nauka, Moscow (1979).
29. V. N. Krivoruchko, Fiz, Nizk, Temp. 22, 1047 (1996)
30. [Low Temp. Phys. 22, 798 (1996)].
31. S. Zhang, J. Appl. Phys. 79, 4592 (1996).
32. U. Kubo and N. Ohata, J. Phys. Soc. Jpn. 33, 21 (1972).
33. A. Urushibara, Y. Moritomo, T. Arisma et al., Phys. Rev. B51, 14103 (1995).
34. S. E. Lofland, S. M. Bhagat, H. L. Ju et al., Phys. Rev. B52, 15058 (1995).
35. J. Z. Sun, L. Krusin-Elbaum, S. S. P. Parkin, and G. Xiao, Appl. Phys. 67, 2726 (1995).