Metallic bonding of optoelectronic dies to silicon wafers

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 393-396

  Minoglou, K ^a   Kyriakis Bitzaros, E D ^a,b   Grivas, E ^a   Katsafouros, S ^a   Kostopoulos, A ^c   Konstadinidis, G ^c   Halkias, G ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b TEI of Pireaus ^*  (Greece)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544450829     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/096     Document Type: Article

References (7)

1. Kyriakis-Bitzaros E D and Halkias G 2004 High-density hybrid Integration of III-V Compound Optoelectronics with Silicon Integrated circuits Wafer Bonding Applications and Technology ed M Alexe and U Gosele (Springer)
2. http://picmos.intec.ugent.be
3. Matijasevic G, Lee C C and Wang Y 1993 Thin Solid Films 223 276-287
4. Hutter M, Oppermann H, Engelmann G, Wolf J, Ehrmann O, Aschenbrenner R, Reichl 2002 Proc. Conf. on Electronic Components and Technology
5. Okamoto and Massalski 1992 Binary Alloy Phase Diagrams 3 (Metals Park, OH: ASM) p 2863
6. Lin H C, Chang K L, Hsieh K C, Cheng K Y and Wang W H 2002 J. Appl. Phys. 92 (7)
7. Ramirez A G, Mavoori H and Jin S 2002 Appl. Phys. Lett. 80 (3) 398-400