Preparation and characterization of the junction n-CuInSe 2/p-CdTe solar cell by the stacked elemental layer (SEL) technique

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 3, 2005, Pages 1493-1498

  Ashour, A ^a   Ramadan, A A ^b   Abd El Hady, K ^a   Akl, A A S ^a  

^a Minia University ^*  (Egypt)

^b Helwan University   (Egypt)

Author keywords

CuInSe2 CdTe; Heterojunction; I V Characteristics; Illumination; SEL Technique

Indexed keywords

CADMIUM TELLURIDE; CARRIER MOBILITY; CONVERSION EFFICIENCY; COPPER COMPOUNDS; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; LIGHTING; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SOLAR CELLS; SOLAR ENERGY;

CUINSE2; CURRENT-VOLTAGE MEASUREMENTS; DARK I-V CHARACTERISTICS; HETEROJUNCTION SOLAR CELLS; IV CHARACTERISTICS; RECOMBINATION MECHANISMS; SEL TECHNIQUE; STACKED ELEMENTAL LAYER;

SELENIUM COMPOUNDS;

EID: 22544444649     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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