Effect of temperature variation on shift and broadening of the exciton band in Cs3Bi2I9 layered crystals

Low Temperature Physics

Volumn 30, Issue 12, 2004, Pages 964-967

  MacHulin, V F ^a   Motsnyi, F V ^a   Smolanka, O M ^a   Svechnikov, G S ^a   Peresh, E Yu ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BISMUTH COMPOUNDS; CESIUM COMPOUNDS; CRYSTALS; EXCITONS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

EFFECT OF TEMPERATURE; EXCITON-BINDING ENERGY; FERROELASTIC PHASE TRANSITION; HETEROPHASE STRUCTURES; REFLECTION SPECTRA; TEMPERATURE REGIONS; TEMPERATURE SHIFT; TRANSITION REGIONS;

IODINE COMPOUNDS;

EID: 22544438703     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1820036     Document Type: Article

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