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Volumn 588, Issue 1-3, 2005, Pages 71-82

Initial growth processes of ultra-thin Ni-layers on Si(1 1 1) and electronic structure of epitaxially grown NiSi2

Author keywords

Medium energy ion scattering; Nickel; Photoelectron spectroscopy; Silicides; Surface electronic phenomena; Surface structure

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; PHOTOELECTRON SPECTROSCOPY; REACTION KINETICS; SILICON; SURFACE STRUCTURE; ULTRATHIN FILMS; ANNEALING; NICKEL COMPOUNDS;

EID: 22444443352     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.05.029     Document Type: Article
Times cited : (19)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.