|
Volumn 588, Issue 1-3, 2005, Pages 71-82
|
Initial growth processes of ultra-thin Ni-layers on Si(1 1 1) and electronic structure of epitaxially grown NiSi2
|
Author keywords
Medium energy ion scattering; Nickel; Photoelectron spectroscopy; Silicides; Surface electronic phenomena; Surface structure
|
Indexed keywords
BINDING ENERGY;
ELECTRONIC STRUCTURE;
EPITAXIAL GROWTH;
PHOTOELECTRON SPECTROSCOPY;
REACTION KINETICS;
SILICON;
SURFACE STRUCTURE;
ULTRATHIN FILMS;
ANNEALING;
NICKEL COMPOUNDS;
MEDIUM ENERGY ION SCATTERING;
NI-SI SYSTEM;
SILICIDES;
SURFACE ELECTRONIC PHENOMENA;
NICKEL;
ULTRATHIN FILMS;
|
EID: 22444443352
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.05.029 Document Type: Article |
Times cited : (19)
|
References (42)
|