The effects of hydrostatic pressure and applied electric field on shallow donor impurities in GaAs/GaAlAs graded quantum well

Surface Review and Letters

Volumn 12, Issue 2, 2005, Pages 155-159

  Kasapoglu, E ^a   Sari, H ^a   Sokmen I ^b  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b DOKUZ EYLUL UNIVERSITY   (Turkey)

Author keywords

Graded quantum well; Hydrostatic pressure

Indexed keywords

BINDING ENERGY; DIAMONDS; ELECTRIC FIELDS; HAMILTONIANS; HYDROSTATIC PRESSURE; IMPURITIES; MICROSTRUCTURE; PERMITTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

DIAMOND ANVIL CELL (DAC); DONOR IMPURITIES; EFFECTIVE MASS APPROXIMATION; GRADED QUANTUM WELLS (GQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 22344453483     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218625X05006871     Document Type: Article

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