Accurate measurement method of specific ohm-contact resistance

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

Volumn 25, Issue 2, 2005, Pages 276-279

  Cao, Chunhai ^a  

^a NANJING ELECTRONIC DEVICES INSTITUTE   (China)

Author keywords

Measurement method; Specific ohm contact resistance; TLM

Indexed keywords

OHMIC CONTACTS; SEMICONDUCTOR DEVICE MODELS; TRANSMISSIONS;

END RESISTANCE CORRECTION MODEL; EQUIVALENT ELECTRICAL CIRCUIT MODEL; SPECIFIC OHM CONTACT RESISTANCE; TRANSMISSION LINE MODE;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 22344443995     PISSN: 10003819     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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2. Ping A T, Asif Khan M, Adesida I. Ohmic contacts to n-type GaN using Pd/Al metallization[J]. Solid Electronic Materials, 1996; 25(3): 819
3. Johnson B P, Huang C I. Ohmic contacts to GaAs transferred electron devices[J]. J Electrochem Soc. 1978; 125(3): 473
4. Reeves G K. Specific contact resistance using a circular transmission model[J]. Solid State Electronics, 1980; 23: 487
5. Reeves G K, Harrison H B. Obtaining the specific contact resistance from transmission line model measurements[J]. IEEE, EDL, 1982; EDL-3(5): 111