-
1
-
-
0016134321
-
Inherent memory effects in ZnS :Mn thin film EL devices
-
Y. Yamauchi, M. Takeda, Y. Kakihara, M. Yoshida, J. Kawaguchi, H. Kishishita, Y. Nakata, T. Inoguchi, and S. Mito, "Inherent memory effects in ZnS :Mn thin film EL devices," in IEDM Tech. Dig., 1974, pp. 348-351.
-
(1974)
IEDM Tech. Dig
, pp. 348-351
-
-
Yamauchi, Y.1
Takeda, M.2
Kakihara, Y.3
Yoshida, M.4
Kawaguchi, J.5
Kishishita, H.6
Nakata, Y.7
Inoguchi, T.8
Mito, S.9
-
2
-
-
0000431027
-
Electroluminescence efficiency profiles of Mn in ZnS ac thin-film electroluminescent devices
-
V. Marrello and A. Onton, "Electroluminescence efficiency profiles of Mn in ZnS ac thin-film electroluminescent devices," Appl. Phys. Lett., vol. 34, no. 8, pp. 525-527, 1979.
-
(1979)
Appl. Phys. Lett
, vol.34
, Issue.8
, pp. 525-527
-
-
Marrello, V.1
Onton, A.2
-
3
-
-
0020746092
-
Mechanisms of the negativeresistance characteristics in ac thin-film electroluminescent devices
-
May
-
K.-W. C. Yang and S. J. T. Owen, "Mechanisms of the negativeresistance characteristics in ac thin-film electroluminescent devices," IEEE Trans. Electron Devices, vol. ED-30, pp. 452-459, May 1983.
-
(1983)
IEEE Trans. Electron Devices, Vol. ED-30
, pp. 452-459
-
-
Yang, K.-W.C.1
Owen, S.J.T.2
-
4
-
-
0019591024
-
Modeling ac thin-film electroluminescent devices
-
First Workshop on EL, Liege, Belgium 1980
-
D. H. Smith, "Modeling ac thin-film electroluminescent devices," J. Lumin., vol. 23, pp. 209-235, 1981; First Workshop on EL, Liege, Belgium, 1980.
-
(1981)
J. Lumin
, vol.23
, pp. 209-235
-
-
Smith, D.H.1
-
5
-
-
0019589745
-
Memory in thin-film electroluminescent devices
-
W. E. Howard, "Memory in thin-film electroluminescent devices," J. Lumin., vol. 23, pp. 155-173, 1981; First Workshop on EL, Liege, Belgium, 1980.
-
(1980)
J. Lumin 1981; First Workshop on EL, Liege, Belgium
, vol.23
, pp. 155-173
-
-
Howard, W.E.1
-
6
-
-
3843141609
-
Transient measurement on thin-film electroluminescent devices
-
El Paso, TX: Cinco Puntos
-
K. A. Neyts, D. Corlatan, P. De Visschere, J. Van den Bossche, and F. Vereecken, "Transient measurement on thin-film electroluminescent devices," in 6th EL-Workshop in El Paso 1992. El Paso, TX: Cinco Puntos, pp. 140-145.
-
6th EL-Workshop in El Paso 1992
, pp. 140-145
-
-
Neyts, K.A.1
Corlatan, D.2
De Visschere, P.3
Bossche Den J.Van4
Vereecken, F.5
-
7
-
-
0019899546
-
A simple model for the hysteretic behavior of ZnS :Mn thin film electroluminescent devices
-
Jan
-
W. Howard, O. Sahni, and P. Alt, "A simple model for the hysteretic behavior of ZnS :Mn thin film electroluminescent devices," J. Appl. Phys., vol. 53, pp. 639-647, Jan. 1982.
-
(1982)
J. Appl. Phys
, vol.53
, pp. 639-647
-
-
Howard, W.1
Sahni, O.2
Alt, P.3
-
8
-
-
0026381228
-
A simple model for the hysteretic behavior of thin film electroluminescent devices
-
Dec
-
K. A. Neyts, "A simple model for the hysteretic behavior of thin film electroluminescent devices," IEEE Trans. Electron Devices, vol. 38, pp. 2604-2611, Dec. 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, pp. 2604-2611
-
-
Neyts, K.A.1
-
9
-
-
0024104903
-
A computationally simple model for hysteretic thin film electroluminescent devices
-
J. M. Jarem and V. P. Singh, "A computationally simple model for hysteretic thin film electroluminescent devices," IEEE Trans. Electron Devices, vol. 35, pp. 1834-1841, 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 1834-1841
-
-
Jarem, J.M.1
Singh, V.P.2
-
10
-
-
0027610836
-
Analysis of ZnS : Mntype ac thin-film electroluminescent display devices with bulk traps
-
V. P. Singh, W. Z. Maijd, and D. C. Morton, "Analysis of ZnS : Mntype ac thin-film electroluminescent display devices with bulk traps," in J. SID (1991 IDR Conf.), 1993, pp. 135-141.
-
J. SID (1991 IDR Conf.)
, vol.1993
, pp. 135-141
-
-
Singh, V.P.1
Maijd, W.Z.2
Morton, D.C.3
-
11
-
-
0001735611
-
Excitation efficiency in thinfilm electroluminescent devices: Probe layer measurements
-
Feb
-
J. Benoit, C. Barthou, and P. Benalloul, "Excitation efficiency in thinfilm electroluminescent devices: Probe layer measurements," J. Appl. Phys., vol. 73, pp. 1435-1442, Feb. 1993.
-
(1993)
J. Appl. Phys
, vol.73
, pp. 1435-1442
-
-
Benoit, J.1
Barthou, C.2
Benalloul, P.3
-
12
-
-
0003948156
-
UV induced activator excitation in ZnS :Mn thin film electroluminescent devices with probe layers
-
D. Corlatan, K. Neyts, P. De Visschere, and J. V. den Bossche, "UV induced activator excitation in ZnS :Mn thin film electroluminescent devices with probe layers," in Proc. 1994 Int. Workshop on Electroluminescence. Beijing, China: Science, 1994, pp. 211-217.
-
(1994)
Proc. 1994 Int. Workshop on Electroluminescence. Beijing, China: Science
, pp. 211-217
-
-
Corlatan, D.1
Neyts, K.2
De Visschere, P.3
Den Bossche, J.V.4
-
13
-
-
0030691447
-
Properties of charge carriers in ZnS and their effect of the excitation of Mn
-
D. Corlatan, K. Neyts, P. De Visschere, J. Van den Bossche, and B. Maximus, "Properties of charge carriers in ZnS and their effect of the excitation of Mn," in J. SID, vol. 5, no. 2, 1997.
-
(1997)
J. SID
, vol.5
, Issue.2
-
-
Corlatan, D.1
Neyts, K.2
De Visschere, P.3
Bossche Den J.Van4
Maximus, B.5
-
14
-
-
0028441797
-
Observation and simulation of space charge effects and hysteresis in ZnS :Mn ac thin-film electroluminescent devices
-
May
-
K. Neyts, D. Corlatan, P. De Visschere, and J. Van den Bossche, "Observation and simulation of space charge effects and hysteresis in ZnS :Mn ac thin-film electroluminescent devices," J. Appl. Phys., vol. 75, pp. 5339-5346, May 1994.
-
(1994)
J. Appl. Phys
, vol.75
, pp. 5339-5346
-
-
Neyts, K.1
Corlatan, D.2
De Visschere, P.3
Bossche Den J.Van4
-
15
-
-
0012072510
-
Transient behavior of the excitation efficiency in ZnS thin film electroluminescent devices
-
Beijing, China: Science
-
A. Zeinert, C. Barthou, P. Benalloul, J. Benoit, and H. Gumlich, "Transient behavior of the excitation efficiency in ZnS thin film electroluminescent devices," in Proc. 1994 Int. Workshop on Electroluminescence. Beijing, China: Science, 1994, pp. 179-184.
-
(1994)
Proc. 1994 Int. Workshop on Electroluminescence
, pp. 179-184
-
-
Zeinert, A.1
Barthou, C.2
Benalloul, P.3
Benoit, J.4
Gumlich, H.5
-
16
-
-
84888592941
-
The role of space charge in the electrical behavior of thin film electroluminescent devices
-
Beijing, China: Science
-
K. Neyts, "The role of space charge in the electrical behavior of thin film electroluminescent devices," in Proc. 1994 Int. Workshop on Electroluminescence. Beijing, China: Science, 1994, pp. 28-41.
-
(1994)
Proc. 1994 Int. Workshop on Electroluminescence
, pp. 28-41
-
-
Neyts, K.1
-
17
-
-
0028423033
-
Tentative anatomy of ZnS-type electroluminescence
-
May
-
E. Bringuier, "Tentative anatomy of ZnS-type electroluminescence, " J. Appl. Phys., vol. 75, pp. 4291-4312, May 1994.
-
(1994)
J. Appl. Phys
, vol.75
, pp. 4291-4312
-
-
Bringuier, E.1
-
18
-
-
0026897862
-
How to measure and interpret the conduction current in AC thin-film electroluminescent devices
-
July
-
K. A. Neyts and P. De Visschere, "How to measure and interpret the conduction current in AC thin-film electroluminescent devices," Solid-State Electron., vol. 35, pp. 933-936, July 1992.
-
(1992)
Solid-State Electron
, vol.35
, pp. 933-936
-
-
Neyts, K.A.1
De Visschere, P.2
-
19
-
-
0019579076
-
Studies of temperature effects in ac thin-film el devices
-
June
-
K. W. Yang, S. J. Owen, and D. H. Smith, "Studies of temperature effects in ac thin-film el devices," IEEE Trans. Electron Devices, vol. ED-28, pp. 703-707, June 1981.
-
(1981)
IEEE Trans. Electron Devices, Vol. ED-28
, pp. 703-707
-
-
Yang, K.W.1
Owen, S.J.2
Smith, D.H.3
-
20
-
-
84888630546
-
A possible model for thin-film ac electroluminescent devices
-
Nov
-
J. A. Cape, R. D. Ketchpel, and L. G. Hale, "A possible model for thin-film ac electroluminescent devices," IEEE Trans. Electron Devices, vol. ED-25, p. 1352, Nov. 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.25
, pp. 1352
-
-
Cape, J.A.1
Ketchpel, R.D.2
Hale, L.G.3
-
21
-
-
0030242728
-
Numerical simulation of charge transfer and light emission in SrS :Ce thin film electroluminescent devices
-
Sept
-
K. Neyts, "Numerical simulation of charge transfer and light emission in SrS :Ce thin film electroluminescent devices," IEEE Trans. Electron Devices, vol. 43, p. 1343-1350, Sept. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1343-1350
-
-
Neyts, K.1
-
22
-
-
0001505259
-
Analytical model for thin-film electroluminescent devices
-
Oct
-
K. A. Neyts and P. De Visschere, "Analytical model for thin-film electroluminescent devices," J. Appl. Phys., vol. 68, pp. 4163-4171, Oct. 1990.
-
(1990)
J. Appl. Phys
, vol.68
, pp. 4163-4171
-
-
Neyts, K.A.1
De Visschere, P.2
-
24
-
-
0003052404
-
Hybrid electroluminescent devices incorporating thick and thin film technologies
-
Beijing, China: Science
-
X. Wu, P. Bailey, D. Carkner, D. Doxsee, K. Foo, S. Sladen, W. Smy, and R. Williamson, "Hybrid electroluminescent devices incorporating thick and thin film technologies," in Proc. 1994 Int. Workshop on Electroluminescence. Beijing, China: Science, 1994, pp. 232-237.
-
(1994)
Proc. 1994 Int. Workshop on Electroluminescence
, pp. 232-237
-
-
Wu, X.1
Bailey, P.2
Carkner, D.3
Doxsee, D.4
Foo, K.5
Sladen, S.6
Smy, W.7
Williamson, R.8
-
25
-
-
0347383061
-
Hybrid el displays
-
Berlin, Germany: Wissenschaft und Technik Verlag
-
X. Wu, "Hybrid el displays," in Inorganic and Organic Electroluminescence. Berlin, Germany: Wissenschaft und Technik Verlag, 1996, pp. 285-289.
-
(1996)
Inorganic and Organic Electroluminescence
, pp. 285-289
-
-
Wu, X.1
-
26
-
-
84888620252
-
Expansion of bottle-neck processes in electroluminescence
-
El Paso, TX: Cinco Puntos Proc. 6th Workshop Electroluminescence, May 11-13, 1992
-
X. Xurong, "Expansion of bottle-neck processes in electroluminescence," in 6th EL-Workshop in El Paso 1992. El Paso, TX: Cinco Puntos, pp. 373-378; in Proc. 6th Workshop Electroluminescence, May 11-13, 1992.
-
6th EL-Workshop in El Paso 1992
, pp. 373-378
-
-
Xurong, X.1
-
28
-
-
0019563468
-
Probe layer measurements of electroluminescence excitation in ac thin-film devices
-
May
-
V. Marrello, L. Samuelson, and A. Onton, "Probe layer measurements of electroluminescence excitation in ac thin-film devices," J. Appl. Phys., vol. 52, pp. 3590-3599, May 1981.
-
(1981)
J. Appl. Phys
, vol.52
, pp. 3590-3599
-
-
Marrello, V.1
Samuelson, L.2
Onton, A.3
-
29
-
-
5244313036
-
Multiplication and the excitation efficiency in electroluminescent devices based on ZnS
-
Berlin, Germany: Wissenschaft und Technik Verlag
-
K. Neyts, D. Corlatan, J. Van den Bossche, and P. De Visschere, "Multiplication and the excitation efficiency in electroluminescent devices based on ZnS," in Inorganic and Organic Electroluminescence. Berlin, Germany: Wissenschaft und Technik Verlag, 1996, pp. 43-46.
-
(1996)
Inorganic and Organic Electroluminescence
, pp. 43-46
-
-
Neyts, K.1
Corlatan, D.2
Bossche Den J.Van3
De Visschere, P.4
-
30
-
-
0030713265
-
Experimental investigation of currents and efficiencies in thin-film electroluminescent devices
-
K. Neyts, D. Corlatan, P. De Visschere, M. Leppanen, and J. Viljanen, "Experimental investigation of currents and efficiencies in thin-film electroluminescent devices," J. SID, vol. 5, no. 2, pp. 137-144, 1997.
-
(1997)
J. SID
, vol.5
, Issue.2
, pp. 137-144
-
-
Neyts, K.1
Corlatan, D.2
De Visschere, P.3
Leppanen, M.4
Viljanen, J.5
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