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Volumn 124, Issue 3, 2004, Pages 286-292

Study of Proximity Lithography Simulations Using Actual Measurements of Dissolution Rates in Thick Resist Films

Author keywords

dissolution rate; mask aligner; proximity lithography; resist pattern simulation; thick film resist

Indexed keywords


EID: 22144495491     PISSN: 03854205     EISSN: 13475533     Source Type: Journal    
DOI: 10.1541/ieejfms.124.286     Document Type: Article
Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.