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Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 323-327

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

(6) Dong, J R a Teng, J H a Chua, S J a Wang, Y J a Foo, B C a Yin, R a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

A3. MOCVD; B1. InGaAsP AlGaInP quantum well; B1. TBP and TBAs; B3. Laser diode

Indexed keywords

CRYSTAL GROWTH FROM MELT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; ORGANIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

EPILAYERS; INGAASP/ALGAINP QUANTUM WELL; SINGLE QUANTUM WELL (SQW) STRUCTURES; TBP AND TBA;

INDIUM COMPOUNDS;

EID: 22144432311 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.060 Document Type: Article

Times cited : (3)

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