Preparation of stacked structures based on HTS by MOCVD: Growth problems of c-axis and non c-axis biSrCaCuO/Bi4Ti3O12 heterostructures

IEEE Transactions on Applied Superconductivity

Volumn 15, Issue 2 PART III, 2005, Pages 3066-3069

  Endo, Kazuhiro ^a   Badica, Petre ^b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Bi4Ti3O12; BSCCO; c axis and non c axis thin films; Heterostructures; MOCVD

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GROWTH (MATERIALS); HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

BI4TI3O12; BSCCO; C-AXIS AND NON C-AXIS THIN FILMS; CIRCUIT INTEGRATION;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 22044432183     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2005.848741     Document Type: Conference Paper

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