메뉴 건너뛰기




Volumn 44, Issue 1-3, 1995, Pages 463-467

Radiation damage in Si detectors and front-end electronics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 21844509701     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0920-5632(95)80071-9     Document Type: Article
Times cited : (5)

References (19)
  • 7
    • 84914934066 scopus 로고    scopus 로고
    • S.J. Bates, Presentation at this conference.
  • 13
    • 84914936296 scopus 로고    scopus 로고
    • RD20 Collaboration, Radiation damage studies of field plate and p-stop n-side silicon microstrip detectors, to be published in Nucl. Instr. and Meth.
  • 16
    • 84914925647 scopus 로고
    • Measurements of transistors and silicon microstrip detector readout circuits in the Harris AVLSIRA rad-hard CMOS process
    • (1994) IC/HEP/94/4
    • Raymond1
  • 17
    • 84914943555 scopus 로고    scopus 로고
    • F. Faccio et al., Noise characterization of transistors in a 1.2 μm CMOS-SOI technology up to a total dose of 12 Mrad, to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.