Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 4, 1995, Pages 2199-2209

  Martins, R ^a   Vieira, M ^b   Ferreira, I ^a   Fortunato, E ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b Center of Excellence in Microelectronics Optoelectronics and Processes   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21844500459     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579543     Document Type: Article

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