New perspectives in high-speed low-noise charge amplifiers with ultra-wide band heterojunction FETs

Nuclear Physics B (Proceedings Supplements)

Volumn 44, Issue 1-3, 1995, Pages 591-598

  Bertuccio, G ^a   De Geronimo, G ^a   Longoni, A ^a   Pullia, A ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21844482243     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0920-5632(95)80091-3     Document Type: Article

References (23)

1. Processing the signals from solid-state detectors in elementary physics
2. Choice between FETs or Bipolar Transistors and Optimization of Their Working Points in Low Noise Preamplifiers for Fast Pulse Processing. Theory and Experimental Results
3. Electron dynamics in short channel field-effect transistors
4. Semiconductors for Room-Temperature Radiation Detector Applications
5. Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources
6. Low frequency gate current noise in high electron mobility transistors: experimental analysis
7. Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x<0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's
8. GaAs FET's with a flicker-noise corner below 1 MHz