AlGaInP light emitting diode with metal reflector structure

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5739, Issue , 2005, Pages 81-85

  Jan, Wayne ^a   Liao, Tien Fu ^a   Chen, Tzer Perng ^a   Chang, Chih Sung ^a  

^a United Epitaxy Company Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LIGHT SOURCES; MICROPROCESSOR CHIPS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; TRAFFIC SIGNALS; VAPOR PHASE EPITAXY;

AUTOMOTIVE LIGHTING; HALOGEN LAMPS; LUMINOUS EFFICIENCY; METAL BONDING (MB); MIRROR-SUBSTRATE (MS);

LIGHT EMITTING DIODES;

EID: 21844472770     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.589947     Document Type: Conference Paper

References (2)

1. R. Wirth, S. Illek, C. Karnutsch, I. Pietzonka, A. Plossl, P.Stauss, W. Stein, W. Wegleiter, R. Windisch, H. Zull, and K. Streubel, Recent progress of AlGaInP thin film light emitting diodes, PROC. SPIE, vol.4996, pp. 1-9, 2003.
2. I. -H. Tan, D.A. Vanderwater, J. -W. Huang, G.E. Hofler, F.A. Kish, E.I. Chen, and T.D. Ostentowski, "Wafer bonding of 75mm diameter GaP to AlGaInP-GaP light emitting diode wafers", J. Of Electronic Materials, vol. 29, no. 2, 2000, pp. 188-194.