Morphology control in the formation of compound semiconductors using electrochemical atomic layer epitaxy (EC-ALE)

Proceedings - Electrochemical Society

Volumn 8, Issue , 2001, Pages 76-84

  Wade, Travis ^a   Flowers, Billy ^a   Varazo, Kris ^a   Lay, Marcus ^a   Happek, Uwe ^b   Stickney, John L ^b  

^a UNIVERSITY OF GEORGIA   (United States)

^b Department of Physics ^*

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BATH DEPOSITION (CBD); COMPOUND SEMICONDUCTORS; LATTICE MATCHING; SURFACE LIMITED REACTIONS;

CRYSTAL LATTICES; EPITAXIAL GROWTH; MONOLAYERS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SURFACE REACTIONS;

ELECTROCHEMISTRY;

EID: 21744452802     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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