A single-pole double-throw (SPDT) circuit using lateral metal-contact micromachined switches

Sensors and Actuators, A: Physical

Volumn 121, Issue 1, 2005, Pages 187-196

  Tang, M ^a   Liu, A Q ^a   Agarwal, A ^b   Liu, Z S ^c   Lu, C ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

DRIE; Lateral contact switch; RF MEMS; SPDT circuit

Indexed keywords

ELECTRIC POTENTIAL; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MILLIMETER WAVE DEVICES; REACTIVE ION ETCHING; SILICON ON INSULATOR TECHNOLOGY; WAVEGUIDES;

DEEP REACTIVE ION ETCHING (DRIE); LATERAL CONTACT SWITCH; RF MEMS; SINGLE-POLE DOUBLE-THROW (SPDT) CIRCUITS;

SWITCHES;

EID: 21744452210     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.12.017     Document Type: Article

References (13)

1. K. Kawakyu, Y. Ikeda, M. Nagaoka, K. Ishida, A. Kameyama, T. Nitta, M. Yoshimura, Y. Kitaura, and N. Uchitomi A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system Proceedings of the IEEE MTT-S International Microwave Symp. Dig. 1996 pp. 647-650
2. T. Shigematsu, N. Suematsu, N. Takeuchi, Y. Iyama, and A. Mizobuchi A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes Proceedings of the IEEE MTT-S Int. Microwave Symp. Dig. 1997 pp. 527-530
3. S.P. Pacheco, D. Peroullis, and L.P.B. Katehi MEMS single-pole double-throw (SPDT) X and K-band switching circuits Proceedings of the IEEE MTT-S Int. Microwave Symp. Dig. 2001 pp. 321-324
4. M.C. Scardelletti, G.E. Ponchak, N.C. Varaljay, and MEMS Ka-band single-pole double-throw (SPDT) switch for switched line phase shifters Proceedings of the IEEE Antennas & Propagation Soc. Int. Symp., 2 2002 pp. 2-5
5. D. Sievenpiper, H.J. Song, H.P. Hsu, G. Tangonan, R.Y. Loo, and J. Schaffner MEMS-based switched diversity antenna at 2.3 GHz for automotive applications Proceedings of the fifth International Symposium on Wireless Personal Multimedia Communications, 2 2002 pp. 762-765
6. D. Hyman, A. Schmitz, B. Warneke, T.Y. Hsu, J. Lam, J. Brown, J. Schaffner, A. Walston, R.Y. Loo, G.L. Tangonan, M. Mehregany, and J. Lee GaAs-compatible surface-micromachined RF MEMS switches Electron. Lett. 35 3 1999 224 226
7. B. Schauwecher, K.M. Strohm, T. Mack, W. Simon, and J.-F. Luy Single-pole double-throw switch based on toggle switch Electron. Lett. 39 8 2003 668 670
8. J.-H. Park, S. Lee, and J.-M. Kim A 35-60 GHz single-pole double-throw (SPDT) switching circuit using direct contact MEMS switches and double resonance technique Proceedings of the 12th International Conference Transducers, Solid-State Sensors, Actuators and Microsystems, 2 2003 pp. 1796-1799
9. M. Tang, A.Q. Liu, A. Agarwal, Q.X. Zhang, and P. Win A new approcach of lateral RF MEMS switch Analog Integr. Circuits Signal Process. 40 2004 165 173
10. A.Q. Liu, M. Tang, A. Agarwal, and A. Alphones Low-loss lateral micromachined switches for high frequency applications J. Micromech. Microeng. 15 2005 157 167
11. A.Q. Liu, W. Palei, M. Tang, and A. Alphones Single-pole-four-throw switch using high-aspect-ratio lateral switches Electron. Lett. 40 18 2004 1125 1126
12. J.M. Gere, and S.P. Timoshenko Mechanics of Material 4th ed. 1997 PWS Publishing Company Boston
13. G.J. Burger, E.J.T. Smulders, J.W. Berenschot, T.S.J. Lammerink, J.H.J. Fluitman, and S. Imai High-resolution shadow-mask patterning in deep holes and its application to an electrical wafer feed-through Sens. Actuators A 54 1996 669 673