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Volumn 62, Issue 19, 1993, Pages 2378-2380
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Atomic layer epitaxy of GaAs with a 2 μm/h growth rate
a
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 21744452175
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.109370 Document Type: Article |
Times cited : (6)
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References (7)
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