InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy

Optical Review

Volumn 4, Issue 1, 1997, Pages A69-A71

  Kashima, Yasumasa ^a   Munakata, Tsutomu ^a   Matoba, Akio ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

InGaAsP edge emitting LED; low coherence; MOVPE; multiple quantum well; selective area growth

Indexed keywords

EID: 21744434855     PISSN: 13406000     EISSN: 13499432     Source Type: Journal    
DOI: 10.1007/BF02935995     Document Type: Article

References (5)

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