New low-cost thermally stable process to reduce silicon substrate losses: A way to extreme frequencies for high volume Si technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 463-466

  Detcheverry, C ^a   Van Noort, W D ^a   Havens, R J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COSTS; ELECTRIC CONDUCTIVITY; NATURAL FREQUENCIES; REACTIVE ION ETCHING; SILICON; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CHEMICAL MECHANICAL POLISHING (CMP); RESISTIVE SILICON WAFERS (HRS); SEMI-INSULATING CHANNEL STOPPER (SICS); SILICON SUBSTRATE;

SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

EXTREME FREQUENCIES; HIGH VOLUMES; LOW-COSTS; SEMI-INSULATING CHANNEL STOPPERS; SI-TECHNOLOGY; SILICON SUBSTRATES; STABLE PROCESS; STOPPER LAYERS; SUBSTRATE LOSS; THERMALLY STABLE;

EID: 21644485278     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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