Fabrication and characterization of multiterminal superconductor-insulator-normal metal-insulator-superconductor Josephson devices

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Nevirkovets, I P ^a,b   Chernyashevskyy, O ^a,b   Ketterson, J B ^a   Goldobin, E ^c  

^a NORTHWESTERN UNIVERSITY   (United States)

^b INSTITUTE OF METAL PHYSICS   (Ukraine)

^c UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL LEADS; INJECTION CURRENT; QUASIPARTICLES; TUNNEL BARRIERS;

ALUMINUM COMPOUNDS; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; METAL INSULATOR BOUNDARIES; SUPERCONDUCTING MATERIALS;

JOSEPHSON JUNCTION DEVICES;

EID: 21644475397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1925766     Document Type: Article

References (23)

1. I. U. Giaever, U.S. Patent No. 116427 (1963).
2. K. E. Gray, Appl. Phys. Lett. 32, 392 (1978).
3. K. K. Likharev, V. K. Semenov, O. V. Snigirev, and B. N. Todorov, IEEE Trans. Magn. MAG-15, 420 (1979).
4. S. M. Faris, S. I. Raider, W. J. Gallagher, and R. E. Drake, IEEE Trans. Magn. MAG-19, 1293 (1983).
5. A. W. Kleinsasser and W. J. Gallagher, in Superconducting Devices, edited by, S. T. Ruggiero, and, D. A. Rudman, (Academic, San Diego, 1990).
6. I. P. Nevirkovets, J. E. Evetts, and M. G. Blamire, Phys. Lett. A 0375-9601 10.1016/0375-9601(94)90876-1 187, 119 (1994); I. P. Nevirkovets, M. G. Blamire, and J. E. Evetts, IEEE Trans. Appl. Supercond. 5, 3106 (1995).
7. I. P. Nevirkovets, J. E. Evetts, and M. G. Blamire, Phys. Lett. A 0375-9601 10.1016/0375-9601(94)90876-1 187, 119 (1994); I. P. Nevirkovets, M. G. Blamire, and J. E. Evetts, IEEE Trans. Appl. Supercond. 5, 3106 (1995).
8. A. F. Morpurgo, T. M. Klapwijk, and B. J. van Wees, Appl. Phys. Lett. 72, 966 (1998).
9. N. E. Booth, P. A. Fisher, M. Nahum, and J. N. Ullom, Nucl. Instrum. Methods Phys. Res. A 444, 33 (2000).
10. F. Giazotto, F. Taddei, T. T. Heikkila, R. Fazio, and F. Beltram, Appl. Phys. Lett. 83, 2877 (2003).
11. A. M. Savin, J. P. Pekola, J. T. Flyktman, and A. Anthore, Appl. Phys. Lett. 84, 4179 (2004).
12. J. J. A. Baselmans, A. F. Morpurgo, B. J. van Wees, and T. M. Klapwijk, Nature (London) 397, 43 (1999).
13. A. F. Volkov, Phys. Rev. Lett. 74, 4730 (1995).
14. I. P. Nevirkovets and J. B. Ketterson (unpublished).
15. A similar three-terminal device was reported by G. Carapella, G. Costabile, and R. Latempa, J. Phys.: Condens. Matter 12, L1 (2000); however, their device was fabricated ex situ, which resulted in a large thickness of the middle Al layer and its inevitable contamination. The authors did not report the CVC of the SIN and NIS interfaces.
16. A similar three-terminal device was reported by G. Carapella, G. Costabile, and R. Latempa, J. Phys.: Condens. Matter 12, L1 (2000); however, their device was fabricated ex situ, which resulted in a large thickness of the middle Al layer and its inevitable contamination. The authors did not report the CVC of the SIN and NIS interfaces.
17. I. P. Nevirkovets, J. B. Ketterson, and S. Lomatch, Appl. Phys. Lett. 74, 1624 (1999).
18. A. W. Kleinsasser, IEEE Trans. Appl. Supercond. 11, 1043 (2000).
19. I. P. Nevirkovets and S. E. Shafranjuk, Phys. Rev. B 59, 1311 (1999).
20. I. P. Nevirkovets, S. E. Shafranjuk, and J. B. Ketterson, Phys. Rev. B 68, 024514 (2003).
21. P. Santhanam and D. E. Prober, Phys. Rev. B 29, 3733 (1984).
22. F. R. Fickett, Cryogenics 11, 349 (1971).
23. W. J. Gallagher, IEEE Trans. Magn. MAG-21, 709 (1985).