Process technology Fully-Silicided (FUSI) gates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 77-

  Kedzierski, Jakub ^a   Jin, Gyoyoung ^b  

^a IBM   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

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[No Author keywords available]

Indexed keywords

EID: 21644470189     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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