Scaling study of Si and strained Si n-MOSFETs with different high-κ gate stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 597-599

  Yang, Lianfeng ^a   Watling, Jeremy R ^a   Adam Lema, Fikru ^a   Asenov, Asen ^a   Barker, John R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON MOBILITY; LIGHT SCATTERING; MONTE CARLO METHODS; PERMITTIVITY; PHONONS; POISSON DISTRIBUTION; SILICA; STRAIN; SURFACE ROUGHNESS; LOGIC GATES;

GATE LENGTHS; GATE STACKS; PHONON SCATTERING;

MOSFET DEVICES;

ENSEMBLE MONTE CARLO; HIGH-Κ GATE STACK; INTERFACE ROUGHNESS; MONTE CARLO DEVICE SIMULATIONS; OPTICAL PHONON SCATTERING; PERFORMANCE; SCALING STUDY; SOFT-OPTICAL PHONONS; STRAINED SI MOSFETS; SUB-100NM;

EID: 21644465108     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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