Surface structure of plasma-etched (211)B HgCdTe

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 726-732

  Benson, J D ^a   Stoltz, A J ^a   Varesi, J B ^a   Almeida, L A ^a   Smith, E P G ^b   Johnson, S M ^b   Martinka, M ^a   Kaleczyc, A W ^a   Markunas, J K ^a   Boyd, P R ^c   Dinan, J H ^a  

^a US Army Research Development and Engineering Command   (United States)

^b RAYTHEON COMPANY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

HgCdTe; Plasma etched; Reflection high energy electron diffraction (RHEED)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PLASMA ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE;

EPILAYERS; GAS SPUTTERING; HGCDTE; PYRAMIDS;

MERCURY COMPOUNDS;

EID: 21644455911     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0011-y     Document Type: Conference Paper

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