Effects of effective mass anisotropy and effective mass difference in highly photoexcited semiconductors

Journal of the Physical Society of Japan

Volumn 74, Issue 6, 2005, Pages 1745-1749

  Mizoo, Kazumasa ^a,b   Inagaki, Takeshi J ^a   Ueshima, Yutaka ^b   Aihara, Masaki ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Band anisotropy; Effective mass difference; Electron hole BCS state; High density electron hole systems; Mean field approximation

Indexed keywords

ANISOTROPY; ARTICLE; ELECTRON; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; SEMICONDUCTOR; STATISTICAL SIGNIFICANCE; TEMPERATURE; THEORETICAL MODEL;

EID: 21644447419     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.74.1745     Document Type: Article

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