Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

Electrochimica Acta

Volumn 50, Issue 20, 2005, Pages 4041-4047

  Zhu, W ^a   Yang, J Y ^a   Gao, X H ^a   Bao, S Q ^a   Fan, X A ^a   Zhang, T J ^a   Cui, K ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Bismuth telluride; ECALE; Thermoelectric material; Thin film; UPD

Indexed keywords

BISMUTH COMPOUNDS; ELECTROCHEMISTRY; ELECTRODES; EPITAXIAL GROWTH; FILM GROWTH; PLATINUM;

ATOMIC LAYERS; BISMUTH TELLURIDE; ECALE; UPD;

THIN FILMS;

EID: 21644441674     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2005.01.003     Document Type: Article

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