Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 885-890

  Singh, R ^a   Velicu, S ^a   Crocco, J ^a   Chang, Y ^b   Zhao, J ^b   Almeida, L A ^c   Markunas, J ^c   Kaleczyc, A ^c   Dinan, J H ^c  

^a EPIR TECHNOLOGIES INC   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c NightVision and Electronic Sensorsbirectorate   (United States)

Author keywords

CdZnTe; HgCdTe; Long wavelength infrared (LWIR); Molecular beam epitaxy (MBE); Polished substrates

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; GLASS; INFRARED RADIATION; MOLECULAR BEAM EPITAXY; POLISHING; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE ROUGHNESS; THERMOANALYSIS;

CDZNTE; HGCDTE; LONG WAVELENGTH INFRARED (LWIR); POLISHED SUBSTRATES;

MERCURY COMPOUNDS;

EID: 21644440586     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0037-1     Document Type: Conference Paper

References (2)

1. J.V. Gormley, M.J. Manfra, and A.R. Calawa, Hydroplane Polishing of Semiconductor Crystals. Rev. Sci. Instrument. 52, 1256 (1981).
2. R.K. Singh, R. Bajaj, M. Moinpour, and M. Meuris, Chemical-Mechanical Polishing 2000: Fundamentals and Materials Issues (Warrendale, PA: MRS, 2000), vol. 613.