A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 69-72

  Kim, D H ^a   Kim, J Y ^a   Huh, M ^a   Hwang, Y S ^a   Park, J M ^a   Han, D H ^a   Kim, D I ^a   Cho, M H ^a   Lee, B H ^a   Hwang, H K ^a   Song, J W ^a   Kang, N J ^a   Ha, G W ^a   Song, S S ^a   Shim, M S ^a   Kim, S E ^a   Kwon, J M ^a   Park, B J ^a   Oh, H J ^a   Kim, H J ^a   Woo, D S ^a   Jeong, M Y ^a   Kim, Y I ^a   Lee, Y S ^a   Shin, J C ^a   Seo, J W ^a   Jeong, S S ^a   Yoon, K H ^a   Ahn, T H ^a   Lee, J B ^a   Hyung, Y W ^a   Park, S J ^a   Kim, H S ^a   Choi, W T ^a   Jin, G Y ^a   Park, Y G ^a   Kim, Kinam ^a   more..

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICA; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; ASPECT RATIO; MESH GENERATION;

HEMISPHERICAL GRAINED (HSG) SILICA; LEANING EXTERMINATED RING TYPE INSULATOR (LERI); MECHANICALLY ENHANCED STORAGE NODE FOR VIRTUALLY UNLIMITED HEIGHT; ONE CYLINDRICAL STORAGE NODE (OCS) DRAM; CELL CAPACITANCE; DIELECTRIC TECHNOLOGY; HIGH ASPECT RATIO; MECHANICAL INSTABILITIES; NOVEL PROCESS; OXIDE THICKNESS; STORAGE NODES; SUB-70NM;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 21644432917     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.2004.1419067     Document Type: Conference Paper

References (4)

1. J.M. Park et al., IEDM Tech. Dig., p.823 (2002)
2. J.M. Park et al., Symp. on VLSI Tech., p. 34 (2004)
3. J.Y. Kim et al., Symp. on VLSI Tech., p.11 (2003)
4. H.S. Kim et al., IEDM Tech. Dig., p.411 (2003)