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Volumn 67, Issue , 1995, Pages 2928-

Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

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Indexed keywords

EID: 21544469498 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.114845 Document Type: Article

Times cited : (366)

References (15)

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- J. H. Je, D. Y. Noh, H. K. Kim, and K. S. Liang, Mater. Res. Soc. Symp. Proc. 375, 3 (1995)
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3
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- This assumption is probably valid for many cases of practical interest where Ts≲400 °C and nonthermal intrinsic stresses are large

4
- 84950602428
- This assumption, strictly, only applies to small misfit strains in unrelaxed cubic heterostructures

6
- 0000052325
- See, for example Fundamentals edited by D. T. J. Hurle (Elsevier, Amsterdam, The Netherlandsand references therein
- (1993) Handbook of Crystal Growth , vol.1 , pp. 639
- Greene, J.E.¹

8
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- AIP Series 149, edited by J. E. Greene, W. D. Sproul, and J. A. Thornton (American Institute of Physics, New York
- (1986) Physics and Chemistry of Protective Coatings , pp. 95
- Sundgren, J.-E.¹ Johansson, B.-O.² Rockett, A.³ Barnett, S.A.⁴ Greene, J.E.⁵

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- (1991) J. Phys. Chem. Ref. Data , vol.20 , pp. 557
- Phelps, A.V.¹

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- (1985) Nucl. Instrum. Methods B , vol.15 , pp. 344
- Doolittle, R.L.¹

15
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- Electronic mail: petrov@uiuc.edu Normalized 111 and 002 XRD peak intensities I, from 1-μm-thick TiN layers deposited on amorphous SiO2 at 350 °C under N2+ ion irradiation with Ei=20 eV and Ji/JTi=1–14.X-ray diffraction patterns from TiN films deposited on amorphous SiO2 at 350 °C under N2+ ion irradiation with Ei=20 eV as a function of incident ion-to-metal ratio Ji/JTi and film thickness t: Ji/JTi=1 and (b) Ji/JTi=14High-resolution XTEM micrographs showing the near-interface regions of TiN films grown on amorphous SiO2 at 350 °C under N2+ ion irradiation with Ei=20 eV and an incident ion-to-metal ratio of (a) Ji/JTi=1 and (b) Ji/JTi=14.

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