The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching

Journal of Applied Physics

Volumn 64, Issue 7, 1988, Pages 3516-3521

  Takahagi, T ^a   Nagai, I ^a   Ishitani, A ^a   Kuroda, H ^a   Nagasawa, Y ^b  

^a Research Development Corporation of Japan   (Japan)

^b TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544465957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341489     Document Type: Article

References (0)