Differential read-out architecture for CMOS ISFET microsystems

Electronics Letters

Volumn 41, Issue 12, 2005, Pages 698-699

  Chodavarapu, V P ^a   Titus, A H ^a   Cartwright, A N ^a  

^a State University of New York ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; AMPLIFIERS (ELECTRONIC); ELECTROLYTES; MICROPROCESSOR CHIPS; MOSFET DEVICES; THRESHOLD VOLTAGE;

MICROSYSTEMS; OHMIC CONTACT; PASSIVATION LAYERS; SENSING LAYERS;

CMOS INTEGRATED CIRCUITS;

EID: 21544459053     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051044     Document Type: Article

References (5)

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2. Wong, H-S., and White, M.H.: 'A CMOS-integrated "ISFET-operational amplifier", chemical sensor employing differential sensing', IEEE Trans. Electron. Devices, 1989, 36, pp. 479-487
3. Jacobson, C.G., Dinnar, U., Feinsod, M., and Nemirovsky, Y.: 'Ion sensitive field-effect transistors in standard CMOS fabricated by post processing', IEEE Sens. J., 2002, 2, (4), pp. 279-287
4. Morgenshtein, A., S-Boreysha, L., Dinnar, U., Jakobson, C.G., and Nemirovsky, Y.: 'CMOS readout circuitry for ISFET microsystems', Sens. Actuators B, Chem., 2004, 97, pp. 122-131
5. Bausells, J., Carrabina, J., Errachid, A., and Merlos, A.: 'Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology', Sens. Actuators B, Chem., 1999, 57, pp. 52-62